IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10644168 B1

PDFFull Text
Date of Patent:
May. 05, 2020

Filed:

Nov. 16, 2018

2-d material transistor with vertical structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jean-Pierre Colinge, Hsinchu, TW;

Chung-Cheng Wu, Hsin-Chu County, TW;

Carlos H. Diaz, Mountain View, CA (US);

Chih-Hao Wang, Hsinchu, TW;

Ken-Ichi Goto, Hsin-Chu, TW;

Ta-Pen Guo, Taipei, TW;

Yee-Chia Yeo, Hsinchu, TW;

Zhiqiang Wu, Hsinchu, TW;

Yu-Ming Lin, Taipei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Sterne, Kessler, Goldstein & Fox P.L.L.C.

Primary Examiner:

Feifei Yeung Lopez

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/088 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 21/8256 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/02521 (2013.01); H01L 21/02527 (2013.01); H01L 21/02568 (2013.01); H01L 21/8256 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/66 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract

Semiconductor structures including two-dimensional (2-D) materials and methods of manufacture thereof are described. By implementing 2-D materials in transistor gate architectures such as field-effect transistors (FETs), the semiconductor structures in accordance with this disclosure include vertical gate structures and incorporate 2-D materials such as graphene, transition metal dichalcogenides (TMDs), or phosphorene.

Find Patent Forward Citations

Loading…