The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
May. 11, 2018
Applicant:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Inventors:
Min Gyu Sung, Essex, MA (US);
Wenhui Wang, Gloucester, MA (US);
Jun Lee, Andover, MA (US);
Sony Varghese, Manchester, MA (US);
Assignee:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/28247 (2013.01); H01L 21/32115 (2013.01); H01L 29/495 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method may include providing a device structure, where the device structure includes a semiconductor region, and a gate structure, disposed over the semiconductor region. The gate structure may further include a gate metal. The method may further include oxidizing an upper portion of the gate metal, wherein the upper portion forms an oxide cap, and wherein a lower portion of the gate metal remains metallic.