The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Jul. 27, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Min Hee Cho, Suwon-si, KR;
Satoru Yamada, Yongin-si, KR;
Junsoo Kim, Seongnam-si, KR;
Honglae Park, Seongnam-si, KR;
Wonsok Lee, Suwon-si, KR;
Namho Jeon, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/20 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01);
Abstract
A semiconductor memory device includes a substrate having an active region, word lines extending across the active region, a bit line on the active region between the word lines, a bit line node contact between the bit line and the active region, and a storage node contact on an end portion of the active region, wherein one or more of the bit line node contact or the storage node contact include silicon germanium.