The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Aug. 29, 2018
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Audel Sanchez, Tempe, AZ (US);

Lakshminarayan Viswanathan, Phoenix, AZ (US);

Vikas Shilimkar, Chandler, AZ (US);

Ramanujam Srinidhi Embar, Gilbert, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49503 (2013.01); H01L 21/565 (2013.01); H01L 23/298 (2013.01); H01L 23/3107 (2013.01); H01L 23/49548 (2013.01); H01L 24/48 (2013.01); H01L 2224/45012 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/181 (2013.01);
Abstract

Internally-shielded microelectronic packages having increased resistances to electromagnetic cross-coupling are disclosed, as are methods for fabricating such microelectronic packages. In embodiments, the internally-shielded microelectronic package includes a substrate having a frontside and a longitudinal axis. A first microelectronic device is mounted to the frontside of the substrate, while a second microelectronic device is further mounted to the frontside of the substrate and spaced from the first microelectronic device along the longitudinal axis. An internal shield structure includes or consists of a shield wall, which is positioned between the first and second microelectronic devices as taken along the longitudinal axis. The internal shield structure is at least partially composed of a magnetically-permeable material, which decreases electromagnetic cross-coupling between the first and second microelectronic devices during operation of the internally-shielded microelectronic package.


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