The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Aug. 30, 2018
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Sony Varghese, Manchester, MA (US);
John Hautala, Beverly, MA (US);
Steven R. Sherman, Newton, MA (US);
Rajesh Prasad, Lexington, MA (US);
Min Gyu Sung, Essex, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method may include providing a substrate, comprising a patterning layer. The method may include forming a first pattern of first linear structures in the patterning layer, the first linear structures being elongated along a first direction. The method may include forming a mask over the patterning layer, the mask comprising a second pattern of second linear structures, elongated along a second direction, forming a non-zero angle with respect to the first direction. The method may include selectively removing a portion of the patterning layer while the mask is in place, wherein a first etch pattern is formed in the patterning stack, the first etch pattern comprising a two-dimensional array of cavities. The method may include directionally etching the first etch pattern using an angled ion beam, wherein a second etch pattern is formed, comprising the two-dimensional array of cavities, elongated along the first direction.