The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Sep. 28, 2016
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Shankar Swaminathan, Beaverton, OR (US);

Richard Phillips, Tualatin, OR (US);

Adrien LaVoie, Newberg, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); C23C 16/45542 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02129 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/31138 (2013.01);
Abstract

Methods and apparatuses for patterning substrates using a positive patterning scheme are described herein. Methods involve receiving a substrate having a patterned core material, depositing a doped spacer material conformally over the patterned core material, selectively etching the core material to the doped spacer material to form a spacer mask, and using the spacer mask to etch a target layer on the substrate. Spacer materials may be doped using any of boron, gallium, phosphorus, arsenic, aluminum, and hafnium. Embodiments are suitable for applications in multiple patterning applications.


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