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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10622221 B1

PDFFull Text
Date of Patent:
Apr. 14, 2020

Filed:

Dec. 13, 2018

Methods of etching metal oxides with less etch residue

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Amrita B. Mullick, Santa Clara, CA (US);

Abhijit Basu Mallick, Palo Alto, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Susmit Singha Roy, Sunnyvale, CA (US);

Yingli Rao, Palo Alto, CA (US);

Regina Freed, Los Altos, CA (US);

Uday Mitra, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Servilla Whitney LLC

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32135 (2013.01); H01L 21/02068 (2013.01); H01L 21/306 (2013.01); H01L 21/311 (2013.01); H01L 21/31116 (2013.01); H01L 21/31133 (2013.01); H01L 21/3213 (2013.01);
Abstract

Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.

Find Patent Forward Citations

Mullick, Amrita. (2020). Methods of etching metal oxides with less etch residue (U.S. Patent No. 10622221). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10622221

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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