The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Aug. 30, 2018
Nxp Usa, Inc., Austin, TX (US);
Saumitra Raj Mehrotra, Scottsdale, AZ (US);
Tanuj Saxena, Chandler, AZ (US);
Ljubo Radic, Gilbert, AZ (US);
Bernhard Grote, Phoenix, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
A continuous buried doped isolation region in a substrate of a die. The substrate includes an isolation ring structure surrounding a first area of the die. The continuous buried doped isolation region is of a net first conductivity type and is located in the first area. The continuous buried doped isolation region including a first portion having a net first conductivity type dopant concentration of at least a first level located in an interior region of the first area and extending to a sidewall of the isolation ring structure. The first portion does not extend to the sidewall of the isolation ring structure in a location of a corner area of the first area. The corner area is defined by the isolation ring structure. A second portion of the continuous buried doped isolation region in the corner area has a net first conductivity type dopant concentration of a second level that is lower than the first level. The die comprises a semiconductor device located in the first area and including components located in the substrate in the first area above the continuous buried doped isolation region.