The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Oct. 12, 2015
Applicant:

Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Jong Il Noh, Uiwang-si, KR;

Dong Hun Kang, Uiwang-si, KR;

Jeong Hwan Jeong, Uiwang-si, KR;

Young Nam Choi, Uiwang-si, KR;

Assignee:

Samsung SDI Co., Ltd., Yongin-Si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); C09K 3/14 (2006.01); H01L 21/304 (2006.01); C09G 1/04 (2006.01); C09G 1/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3212 (2013.01); C09G 1/02 (2013.01); C09G 1/04 (2013.01); C09K 3/1409 (2013.01); C09K 3/1463 (2013.01); H01L 21/304 (2013.01); H01L 21/30625 (2013.01);
Abstract

The present invention relates to a CMP slurry composition for polishing a copper line, the CMP slurry composition comprising a colloidal silica, an oxidizing agent, a complexing agent, a corrosion inhibitor, a pH regulator, and ultrapure water. The colloidal silica has a specific surface area (BET) of 72.9 to 88.5 m/g, and 0.1 to 2 wt % of the colloidal silica is included in the CMP slurry composition. The CMP slurry composition has an excellent copper line polishing rate, has a low number of defects and minimizes scratches after polishing, and can minimize dishing.


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