The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Jan. 12, 2018
Globalfoundries Inc., Grand Cayman, KY;
Wei Zhao, Fort Lee, NJ (US);
Ming Hao Tang, Ballston Lake, NY (US);
Haiting Wang, Clifton Park, NY (US);
Rui Chen, Clifton Park, NY (US);
Yuping Ren, Clifton Park, NY (US);
Hui Zang, Guilderland, NY (US);
Scott H. Beasor, Greenwich, NY (US);
Ruilong Xie, Schenectady, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of forming isolation pillars for a gate structure, the method including: providing a preliminary structure including a substrate having a plurality of fins thereon, an STI formed between adjacent fins, an upper surface of the STIs extending higher than an upper surface of the fins, and a hardmask over the upper surface of the fins and between adjacent STIs; forming a first trench in a first selected STI and between adjacent fins in a gate region, and forming a second trench in a second selected STI and between adjacent fins in a TS region; and filling the first and second trenches with an isolation fill thereby forming a first isolation pillar in the gate region and a second isolation pillar in the TS region, the first and second isolation pillars extending below the upper surface of the STIs.