The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Oct. 09, 2017
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Andrew M. Waite, Beverly, MA (US);
Morgan D. Evans, Manchester, MA (US);
John Hautala, Beverly, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method may include providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising an insulator layer and a silicon layer. The silicon layer may be disposed on the insulator layer, where the silicon layer comprises a first silicon thickness variation. The method may include forming an oxide layer on the silicon layer, where the oxide layer has a uniform thickness. The method may include selectively etching the oxide layer on the silicon layer, wherein the oxide layer comprises a first non-uniform oxide thickness. After thermal processing of the SOI substrate in an oxygen ambient, the non-uniform oxide thickness may be configured to generate a second silicon thickness variation in the silicon layer, less than the first silicon thickness variation.