The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Apr. 24, 2018
Applicant:

Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);

Inventors:

Jia-De Peng, Taoyuan, TW;

Lin-Chen Ho, Taichung, TW;

Syin Hsu, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/321 (2006.01); H01L 21/3205 (2006.01); H01L 21/306 (2006.01); H01L 21/304 (2006.01); H01L 21/302 (2006.01); H01L 21/02 (2006.01); C09G 1/02 (2006.01); B24B 57/02 (2006.01); B24B 37/07 (2012.01); B24B 37/04 (2012.01);
U.S. Cl.
CPC ...
H01L 21/3212 (2013.01); B24B 37/044 (2013.01); C09G 1/02 (2013.01); H01L 21/02175 (2013.01); H01L 21/302 (2013.01); H01L 21/304 (2013.01); H01L 21/30625 (2013.01); H01L 21/32051 (2013.01); H01L 21/7684 (2013.01); H01L 23/53257 (2013.01);
Abstract

A process for chemical mechanical polishing a substrate containing tungsten to at least reduce dishing of tungsten features of 100 μm or less. The process includes providing a substrate containing tungsten features of 100 μm or less; providing a polishing composition, containing, as initial components: water; an oxidizing agent; arginine or salts thereof; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a surfactant; and, optionally, a biocide; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and yet at least reducing dishing of the tungsten features of 100 μm or less.


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