The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Dec. 16, 2016
Applicant:
Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung E. V., München, DE;
Inventors:
Philip Rothhardt, Freiburg, DE;
Andreas Wolf, Freiburg, DE;
Sebastian Meier, Freiburg, DE;
Daniel Biro, Freiburg, DE;
Sabrina Lohmüller, Freiburg, DE;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/223 (2006.01); H01L 21/225 (2006.01); H01L 31/18 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/223 (2013.01); H01L 21/2255 (2013.01); H01L 21/2256 (2013.01); H01L 29/36 (2013.01); H01L 31/1804 (2013.01);
Abstract
The invention relates to a method for doping semiconductor substrates by means of a co-diffusion process. First, semiconductor substrates are coated at least on one side with a layer containing at least one first dopant. Two of said substrates in each case are arranged in a process chamber in such a way that two of the coated sides thereof are brought in direct contact.