Freiburg, Germany

Sebastian Meier

This inventor holds 1 USPTO granted patent. Top assignee: Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sebastian Meier. Retrieved from https://idiyas.com/inventor/sebastian-meier-b5hq41io

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Sebastian Meier: Innovator in Semiconductor Doping Technology

Introduction

Sebastian Meier is a prominent inventor based in Freiburg, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for doping semiconductor substrates.

Latest Patents

Sebastian Meier holds a patent titled "Method for doping semiconductor substrates by means of a co-diffusion process and doped semiconductor substrate produced by means of said method." This invention relates to a method for doping semiconductor substrates using a co-diffusion process. In this method, semiconductor substrates are coated on at least one side with a layer containing at least one first dopant. Two of these substrates are arranged in a process chamber such that the coated sides are brought into direct contact, enhancing the efficiency of the doping process. He has 1 patent to his name.

Career Highlights

Sebastian Meier is associated with the Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung E.V., a leading research organization in Germany. His work focuses on advancing semiconductor technologies, which are crucial for various electronic applications.

Collaborations

Some of his notable coworkers include Philip Rothhardt and Andreas Wolf, who contribute to the collaborative efforts in research and development within the organization.

Conclusion

Sebastian Meier's innovative approach to semiconductor doping exemplifies the importance of research and development in advancing technology. His contributions continue to influence the field and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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