The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Jul. 03, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Adra Carr, Albany, NY (US);

Jingyun Zhang, Albany, NY (US);

Choonghyun Lee, Rensselaer, NY (US);

Takashi Ando, Tuckahoe, NY (US);

Pouya Hashemi, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 21/28568 (2013.01); H01L 21/76802 (2013.01); H01L 21/76805 (2013.01); H01L 21/76864 (2013.01); H01L 21/76865 (2013.01); H01L 21/76888 (2013.01); H01L 21/76895 (2013.01); H01L 29/0673 (2013.01); H01L 29/4175 (2013.01); H01L 29/41733 (2013.01); H01L 29/41758 (2013.01); H01L 29/41766 (2013.01); H01L 29/41783 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/458 (2013.01); H01L 29/78696 (2013.01);
Abstract

A method of forming a source/drain contact is provided. The method includes forming a sacrificial layer on a source/drain, and depositing an oxidation layer on the sacrificial layer. The method further includes heat treating the oxidation layer and the sacrificial layer to form a modified sacrificial layer. The method further includes forming a protective liner on the modified sacrificial layer, and depositing an interlayer dielectric layer on the protective liner. The method further includes forming a trench in the interlayer dielectric layer that exposes a portion of the protective liner.


Find Patent Forward Citations

Loading…