The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Jun. 11, 2018
Globalfoundries Inc., Grand Cayman, KY;
Haiting Wang, Clifton Park, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Shesh Mani Pandey, Saratoga Springs, NY (US);
Hui Zang, Guilderland, NY (US);
Garo Jacques Derderian, Saratoga Springs, NY (US);
Scott Beasor, Greenwich, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a hybrid fin cut with improved fin profiles and methods of manufacture. The structure includes: a plurality of fin structures in a first region of a first density of fin structures; a plurality of fin structures in a second region of a second density of fin structures; and a plurality of fin structures in a third region of a third density of fin structures. The first density, second density and third density of fin structures are different densities of fin structures, and the plurality of fin structures in the first region, the second region and the third region have a substantially uniform profile.