The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Feb. 15, 2016
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Shigeo Irie, Joetsu, JP;
Takashi Yoshii, Joetsu, JP;
Keiichi Masunaga, Joetsu, JP;
Yukio Inazuki, Joetsu, JP;
Hideo Kaneko, Joetsu, JP;
Toyohisa Sakurada, Joetsu, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
A photomask blank () having: a transparent substrate (); a first film () etched by chlorine/oxygen-based dry etching and made of a material having resistance against fluorine-based dry etching; and a second film () formed adjacent to the first film and made of a material which comprises silicon and oxygen or silicon, oxygen, and nitrogen and has an Si—Si bond and which is substantially not etched by chlorine/oxygen-based dry etching, wherein: the photoresist adhesive performance is improved; the resist pattern is stably maintained without degrading, collapsing, or peeling even when a fine resist pattern is formed from a photoresist film; and an excellent shape and dimensional accuracy is obtained in regard to etching of a lower layer film in which the resist pattern is used.