The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Oct. 05, 2018
Method for correcting the critical dimension uniformity of a photomask for semiconductor lithography
Applicants:
Carl Zeiss Smt Gmbh, Oberkochen, DE;
Carl Zeiss Sms Ltd., Misgav, IL;
Inventors:
Thomas Thaler, Jena, DE;
Joachim Welte, Darmstadt, DE;
Kujan Gorhad, Kfar Kama, IL;
Vladimir Dmitriev, Tzurit, IL;
Ute Buttgereit, Jena, DE;
Thomas Scheruebl, Jena, DE;
Yuval Perets, Moshav Beit Shearim, IL;
Assignees:
Carl Zeiss SMT GmbH, Oberkochen, DE;
Carl Zeiss SMS Ltd., Misgav, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70191 (2013.01);
Abstract
The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: