The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Aug. 09, 2017
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Adam Jandl, Pleasanton, CA (US);

Sema Ermez, San Jose, CA (US);

Lawrence Schloss, Palo Alto, CA (US);

Sanjay Gopinath, Fremont, CA (US);

Michal Danek, Cupertino, CA (US);

Siew Neo, Sunnyvale, CA (US);

Joshua Collins, Sunnyvale, CA (US);

Hanna Bamnolker, Cupertino, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/76816 (2013.01); H01L 21/76879 (2013.01); H01L 27/10891 (2013.01);
Abstract

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.


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