The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Apr. 13, 2015
Applicant:
Rohm and Haas Electronic Materials, Llc, Marlborough, MA (US);
Inventors:
Deyan Wang, Hudson, MA (US);
Chunyi Wu, Shrewsbury, MA (US);
George G. Barclay, Jefferson, MA (US);
Cheng-Bai Xu, Southboro, MA (US);
Assignee:
Rohm and Haas Electronic Materials, LLC, Marlborough, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/04 (2006.01); G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/038 (2006.01); G03F 7/075 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2041 (2013.01); G03F 7/0046 (2013.01); G03F 7/0048 (2013.01); G03F 7/039 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/0757 (2013.01);
Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.