The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Nov. 28, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yi-Chia Lee, Yilan County, TW;
Chin-Min Lin, Hsinchu, TW;
Cheng San Chou, Hsin Chu, TW;
Hsiang-Fu Chen, Zhubei, TW;
Wen-Chuan Tai, Hsinchu, TW;
Ching-Kai Shen, Zhubei, TW;
Hua-Shu Ivan Wu, Hsinchu County, TW;
Fan Hu, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity.