The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Sep. 11, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Sun-Hye Hwang, Hwaseong-si, KR;
Youn-Joung Cho, Jwasepmg-si, KR;
Won-Woong Chung, Suwon-si, KR;
Nam-Gun Kim, Yongin-si, KR;
Kong-Soo Lee, Hwaseong-si, KR;
Badro Im, Yongin-si, KR;
Yoon-Chul Cho, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.