The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Nov. 12, 2015
Applicant:

Femtometrix, Inc., Santa Ana, CA (US);

Inventors:

Viktor Koldiaev, Morgan Hill, CA (US);

Marc Christopher Kryger, Fountain Valley, CA (US);

John Paul Changala, Tustin, CA (US);

Jianing Shi, Sunnyvale, CA (US);

Assignee:

FemtoMetrix, Inc., Santa Ana, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/88 (2006.01); G01N 21/95 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01N 2201/06113 (2013.01);
Abstract

Semiconductor metrology systems based on directing radiation on a wafer, detecting second harmonic generated (SHG) radiation from the wafer and correlating the second harmonic generated (SHG) signal to one or more electrical properties of the wafer are disclosed. The disclosure also includes parsing the SHG signal to remove contribution to the SHG signal from one or more material properties of the sample such as thickness. Systems and methods described herein include machine learning methodologies to automatically classify obtained SHG signal data from the wafer based on an electrical property of the wafer.


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