The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Oct. 09, 2017
Applicant:
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Inventors:
Gang Wang, Grover, MO (US);
Jeffrey L. Libbert, O'Fallon, MO (US);
Shawn George Thomas, Chesterfield, MO (US);
Qingmin Liu, Glen Carbon, IL (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 27/1203 (2013.01);
Abstract
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type. The epitaxial layer is depleted by the handle substrate free carriers, thereby resulting in a high apparent resistivity, which improves the function of the structure in RF devices.