The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Jul. 10, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Yuan Stephen Yu, San Jose, CA (US);
Wenyuan Lee, San Jose, CA (US);
Boh-Yi Huang, Hsin-Chu, TW;
Brent Lui, San Jose, CA (US);
Tze-Chiang Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method includes providing a register transfer level (RTL) description of a circuit design, providing a plurality of RTL-to-gate-level mapping details by translating the RTL description into a gate-level netlist, providing one or more input/output (I/O) variables as stimulus to simulate the RTL description of the circuit design, capturing a plurality of internal operation values from the simulated RTL description at a beginning time of a specified period of time wherein the specified period of time is less than a time period required to compete a full-scale simulation, mapping the captured internal operation values to corresponding gate-level nodes of the gate-level netlist, capturing a plurality of I/O values from the I/O variables at the beginning time of the specified period of time, and simulating the circuit design in a gate-level for the specified period of time based on the mapped internal operation values and the captured I/O values.