The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Jul. 05, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hung-Hao Chen, Hsinchu, TW;
Che-Cheng Chang, New Taipei, TW;
Wen-Tung Chen, Taipei, TW;
Yu-Cheng Liu, Zhubei, TW;
Horng-Huei Tseng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a capacitor, which includes depositing a bottom electrode layer, depositing a capacitor insulator layer over the bottom electrode layer, depositing a top electrode layer over the capacitor insulator layer, and depositing a dielectric layer over the top electrode layer. The dielectric layer is etched using a process gas until the top electrode layer is exposed. In the etching of the dielectric layer, the dielectric layer has a first etching rate, and the top electrode layer has a second etching rate, and a ratio of the first etching rate to the second etching rate is higher than about 5.0.