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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10535654 B1

PDFFull Text
Date of Patent:
Jan. 14, 2020

Filed:

Feb. 26, 2018

Cut metal gate with slanted sidewalls

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ya-Yi Tsai, Hsinchu, TW;

Chun-Liang Lai, Hsinchu, TW;

Shu-Yuan Ku, Hsinchu County, TW;

Ryan Chia-Jen Chen, Chiayi, TW;

Ming-Ching Chang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Nelson Garces

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/31122 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 21/0274 (2013.01); H01L 21/31053 (2013.01); H01L 21/32139 (2013.01);
Abstract

A semiconductor device includes a substrate, first and second fins protruding out of the substrate, and first and second high-k metal gates (HK MG) disposed over the first and second fins, respectively. From a top view, the first and second fins are arranged lengthwise along a first direction, the first and second HK MG are arranged lengthwise along a second direction generally perpendicular to the first direction, and the first and second HK MG are aligned along the second direction. In a cross-sectional view cut along the second direction, the first HK MG has a first sidewall that is slanted from top to bottom towards the second HK MG, and the second HK MG has a second sidewall that is slanted from top to bottom towards the first HK MG. Methods for producing the semiconductor device are also disclosed.

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