The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Oct. 11, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Naoki Shindo, Nirasaki, JP;

Toshio Hasegawa, Nirasaki, JP;

Naotaka Noro, Nirasaki, JP;

Miyako Kaneko, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/0223 (2013.01); H01L 21/3081 (2013.01); H01L 21/3088 (2013.01);
Abstract

A method for forming a titanium oxide film on a substrate to be processed, which has a silicon portion on a surface thereof, the method including: forming a first titanium oxide film on the surface of the substrate to be processed, which includes the silicon portion, by means of thermal ALD by alternately supplying a titanium-containing gas and a gas containing hydrogen and oxygen serving as an oxidizing agent in a first stage; and forming a second titanium oxide film on the first titanium oxide film by means of plasma ALD by alternately supplying a titanium-containing gas and plasma of an oxygen-containing gas as an oxidizing agent in a second stage.


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