The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Jul. 06, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Yi Xu, San Jose, CA (US);
Takashi Kuratomi, San Jose, CA (US);
Avgerinos V. Gelatos, Scotts Valley, CA (US);
Vikash Banthia, Los Altos, CA (US);
Mei Chang, Saratoga, CA (US);
Kazuya Daito, Milipitas, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A method for forming a film on a substrate in a semiconductor process chamber includes forming a first layer on the substrate using a plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas. The process chamber is then purged and the first layer is thermally soaked with a hydrogen-based precursor gas. The process chamber is then purged again and the process may be repeated with or without the plasma enhanced process until a certain film thickness is achieved on the substrate.