The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Mar. 31, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Chiang Chiu, Changhua County, TW;

Ding-I Liu, Hsinchu, TW;

Chin-Feng Lin, Hsinchu County, TW;

Po-Hsiung Leu, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45565 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/505 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32568 (2013.01); H01J 2237/3321 (2013.01);
Abstract

A showerhead is configured to be mounted inside a processing chamber and provide a processing gas onto a semiconductor wafer inside the processing chamber. The showerhead includes a supply plenum, a faceplate, and an electrode plate assembly. The faceplate is disposed at a side of the supply plenum. The electrode plate assembly is disposed between a gas source and the supply plenum. The electrode plate assembly includes a first plate having a unitary construction and having a plurality of first gas holes, and a second plate having a unitary construction and having a plurality of second gas holes. The second plate is located between the first plate and the supply plenum and separated from the first plate. The plurality of second gas holes are partially overlapped but misaligned with the plurality of first gas holes. A semiconductor apparatus having the same and a semiconductor process are also provided.


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