The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Aug. 10, 2017
Tokyo Electron Limited, Tokyo, JP;
Kandabara Tapily, Mechanicville, NY (US);
Jeffrey Smith, Clifton Park, NY (US);
Nihar Mohanty, Clifton Park, NY (US);
Anton J. Devilliers, Clifton Park, NY (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method of forming a semiconductor device having a channel and a source-drain coupled to the channel. The method includes etching a channel region such that an end of the channel region forms a recess within a gate structure surrounding the channel region. An extension region is formed in contact with the channel region and at least partially filling the recess. Extension material of the extension region has a different composition from channel material of the channel region such that a strain is caused in the channel region. A source-drain region is in contact with the extension region and adjacent to the gate structure.