The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Sep. 19, 2016
Applicant:
Pdf Solutions, Inc., San Jose, CA (US);
Inventors:
Assignee:
PDF SOLUTIONS, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); H01L 29/66795 (2013.01);
Abstract
Methods of measuring fin height electrically for devices fabricated using FinFET technology are disclosed here. One method uses an interleaving comb-like test structure with no gate. The other method extracts fin height from total gate capacitance from FinFETS with varying gate lengths. When a comb-like structure with no gate is used to measure fin height, if there is another structure with a gate is used, then the gate capacitance may be measured to independently measure thickness of gate dielectric.