The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Apr. 12, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Fu-Wei Yao, Hsinchu, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Jiun-Lei Jerry Yu, Zhudong Township, TW;
Man-Ho Kwan, Kowloon, HK;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An isolation structure for active devices is provided. In some embodiments, the isolation structure is used in a transistor. The transistor includes a substrate having a first doping type. The transistor also includes a channel layer positioned over the substrate and comprising a first section and a second section. The transistor further includes an active layer positioned over the channel layer. The isolation structure includes a horizontal segment, a first vertical segment, and a second vertical segment. The horizontal segment is arranged below the second section of the channel layer and continuously extends between the first vertical segment and the second vertical segment. The isolation structure has a second doping type that is different than the first doping type.