The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Oct. 30, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Methods of fabricating an integrated circuit device are provided. The method includes depositing a dielectric layer and a first hard mask layer in sequence over a substrate. The method also includes forming a patterned second hard mask on the first hard mask layer, and forming a third hard mask portion in an opening of the patterned second hard mask. The method further includes removing the patterned second hard mask to leave the third hard mask portion on the first hard mask layer, and etching the first hard mask layer to form a patterned first hard mask. In addition, the method includes etching the dielectric layer by using the patterned first hard mask as an etching mask to form trenches in the dielectric layer, and filling the trenches with a conductive material to form conductive lines.