The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Jan. 23, 2017
Applicant:

Macdermid Enthone Inc., Waterbury, CT (US);

Inventors:

Vincent Paneccasio, Jr., Waterbury, CT (US);

Kyle Whitten, Waterbury, CT (US);

Thomas B. Richardson, Waterbury, CT (US);

Ivan Li, Waterbury, CT (US);

Assignee:

MacDermid Enthone Inc., Waterbury, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 3/38 (2006.01); C08G 65/333 (2006.01); H05K 3/18 (2006.01); H05K 3/42 (2006.01); C25D 7/12 (2006.01); C08G 65/24 (2006.01); C08L 71/03 (2006.01); H01L 21/768 (2006.01); H01L 21/48 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
C25D 3/38 (2013.01); C08G 65/33396 (2013.01); C25D 7/12 (2013.01); H05K 3/188 (2013.01); H05K 3/424 (2013.01); H01L 21/486 (2013.01); H01L 21/76898 (2013.01); H05K 2203/0723 (2013.01);
Abstract

An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:


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