The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

May. 31, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Kun-Mo Lin, New Taipei, TW;

Yi-Hung Lin, Taipei, TW;

Jr-Hung Li, Hsinchu County, TW;

Tze-Liang Lee, Hsinchu, TW;

Ting-Gang Chen, Taipei, TW;

Chung-Ting Ko, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01J 37/32 (2006.01); C23C 16/509 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); C23C 16/45565 (2013.01); C23C 16/509 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32357 (2013.01); H01J 37/32366 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32532 (2013.01); H01J 37/32541 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02274 (2013.01); H01L 21/28556 (2013.01);
Abstract

A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.


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