The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Mar. 28, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kam-Tou Sio, Zhubei, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
Charles Chew-Yuen Young, Cupertino, CA (US);
Yi-Ming Sheu, Hsinchu, TW;
Chun-Fu Cheng, Zhubei, TW;
Yi-Han Wang, Beigang Township, Yunlin County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a dielectric layer. The semiconductor device structure also includes a gate stack structure in the dielectric layer. The semiconductor device structure further includes a semiconductor wire partially surrounded by the gate stack structure. In addition, the semiconductor device structure includes a contact electrode in the dielectric layer and electrically connected to the semiconductor wire. The contact electrode and the gate stack structure extend from the semiconductor wire in opposite directions.