The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2019

Filed:

Jan. 11, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Jeremy Ecton, Gilbert, TX (US);

Leonel Arana, Phoenix, AZ (US);

Nicholas S. Haehn, Scottsdale, AZ (US);

Hsin-Wei Wang, Chandler, AZ (US);

Oscar Ojeda, Chandler, AZ (US);

Arnab Roy, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/3213 (2006.01); C23F 1/14 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C23F 1/14 (2013.01); H01L 21/32139 (2013.01); H01L 21/4846 (2013.01);
Abstract

A method of anisotropic etching comprises forming a metal layer above a substrate. A mask layer is formed on the metal layer with openings defined in the mask layer to expose portions of the metal layer. The exposed portions of the metal layer are introduced to an active etchant solution that includes nanoparticles as an insoluble banking agent. In further embodiments, the exposed portions of the metal layer are introduced to a magnetic and/or an electrical field.


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