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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10514610 B1

PDFFull Text
Date of Patent:
Dec. 24, 2019

Filed:

Jul. 09, 2018

Lithography patterning with a gas phase resist

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Shu-Hao Chang, Taipei, TW;

Kuo-Chang Kau, Miaoli County, TW;

Kevin Huang, Hsinchu, TW;

Jeng-Horng Chen, Hsin-Chu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); B05D 1/00 (2006.01); B05D 3/06 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/687 (2006.01); H01L 21/02 (2006.01); G03F 7/004 (2006.01); G03F 7/038 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70341 (2013.01); B05D 1/60 (2013.01); B05D 3/06 (2013.01); B05D 3/061 (2013.01); B05D 3/068 (2013.01); G03F 7/0042 (2013.01); G03F 7/038 (2013.01); G03F 7/11 (2013.01); G03F 7/167 (2013.01); G03F 7/201 (2013.01); G03F 7/2004 (2013.01); G03F 7/2037 (2013.01); G03F 7/2039 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); G03F 7/70325 (2013.01); H01L 21/0271 (2013.01); H01L 21/0274 (2013.01); H01L 21/0277 (2013.01); H01L 21/02118 (2013.01); H01L 21/02277 (2013.01); H01L 21/31111 (2013.01); H01L 21/31133 (2013.01); H01L 21/31144 (2013.01); H01L 21/687 (2013.01); H01L 21/68764 (2013.01);
Abstract

Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

Find Patent Forward Citations

Quick Actions:

Chang, Shu-Hao. (2019). Lithography patterning with a gas phase resist (U.S. Patent No. 10514610). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10514610

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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