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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10510867 B1

PDFFull Text
Date of Patent:
Dec. 17, 2019

Filed:

Dec. 17, 2018

Finfets and methods of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Bor Chiuan Hsieh, Taoyuan, TW;

Chung-Ting Ko, Kaohsiung, TW;

Ting-Gang Chen, Taipei, TW;

Chien Chung Huang, Taichung, TW;

Tai-Chun Huang, Hsinchu, TW;

Tze-Liang Lee, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Valerie N Newton

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A method includes forming a dummy gate stack on a substrate, forming a spacer layer on the dummy gate stack, forming an etch stop layer over the spacer layer and the dummy gate stack, the etch stop layer comprising a vertical portion and a horizontal portion, and performing a densification process on the etch stop layer, wherein the horizontal portion is denser than the vertical portion after the densification process The method also includes forming an oxide layer over the etch stop layer, performing an anneal process on the oxide layer and the etch stop layer, wherein the vertical portion has a greater concentration of oxygen than the horizontal portion after the anneal process.

Find Patent Forward Citations

Hsieh, Bor. (2019). Finfets and methods of forming the same (U.S. Patent No. 10510867). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10510867

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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