The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jan. 31, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chi-Cherng Jeng, Tainan, TW;
Shyh-Wei Cheng, Zhudong Township, Hsinchu County, TW;
Yun Chang, Hsinchu, TW;
Chen-Chieh Chiang, Kaohsiung, TW;
Jung-Chi Jeng, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a trench. The trench has an inner wall and a bottom surface. The method includes forming a second mask layer in the trench. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The second trench exposes the bottom surface and is over a first portion of the dielectric layer. The remaining second mask layer covers the inner wall. The method includes removing the first portion, the first mask layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.