The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Jan. 24, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Kam-Tou Sio, Hsinchu County, TW;

Chih-Liang Chen, Hsinchu, TW;

Charles Chew-Yuen Young, Cupertino, CA (US);

Ho Che Yu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76805 (2013.01); H01L 21/76834 (2013.01); H01L 23/535 (2013.01); H01L 29/7851 (2013.01);
Abstract

An embodiment of a semiconductor switch structure includes source contacts, drain contacts, gates and fins. The contacts and gates are elongated in a first direction and are spaced apart from each other in a second direction perpendicular to the first direction. The gates are interspersed between the contacts. The fins underlie both the contacts and the gates. The fins are elongated in the second direction and are spaced apart from each other in the first direction. A contact via extends through one of the contacts without contacting a gate or a fin. A gate via extends through one of the gates without contacting a contact or a fin. A contact-gate via is in contact with both a contact and a gate but not a fin.


Find Patent Forward Citations

Loading…