The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Jan. 29, 2016
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chu-Fu Lin, Kaohsiung, TW;

Ming-Tse Lin, Hsinchu, TW;

Kuei-Sheng Wu, Miaoli County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76831 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01);
Abstract

A TSV structure includes a substrate comprising at least a TSV opening formed therein, a conductive layer disposed in the TSV opening, and a bi-layered liner disposed in between the substrate and the conductive layer. More important, the bi-layered liner includes a first liner and a second liner, and a Young's modulus of the first liner is different from a Young's modulus of the second liner.


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