The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Feb. 15, 2018
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Schenectady, NY (US);
Chanro Park, Albany, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Andrew Greene, Slingerlands, NY (US);
Siva Kanakasabapathy, Pleasanton, CA (US);
John R. Sporre, Cohoes, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Gate isolation methods and structures leverage the formation of a sidewall spacer layer within a recess formed in an organic planarization layer. The spacer layer enables precise alignment of the cut region of a sacrificial gate, which may be backfilled with an isolation layer. By forming the isolation layer after a reliability anneal of the gate dielectric and after formation of a first work function metal layer, both the desired critical dimension (CD) and alignment of the isolation layer can be achieved.