The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Jul. 19, 2018
Lam Research Corporation, Fremont, CA (US);
Takumi Yanagawa, Fremont, CA (US);
Nikhil Dole, Union City, CA (US);
Ranadeep Bhowmick, San Jose, CA (US);
Eric Hudson, Berkeley, CA (US);
Felix Leib Kozakevich, Sunnyvale, CA (US);
John Holland, San Jose, CA (US);
Alexei Marakhtanov, Albany, CA (US);
Bradford J. Lyndaker, San Ramon, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.