The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jul. 01, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A triple well isolated diode including a substrate having a first conductivity type and a buried layer in the substrate. The buried layer has a second conductivity type opposite to the first conductivity type. The triple well isolated diode includes an epi-layer over the substrate and the buried layer. A portion of the epi-layer having the first conductivity type contacts the buried layer. The triple well isolated diode includes a first well, a second well, a third well and a deep well in the epi-layer. The first well and the third well have the second conductivity type. The second well and the deep well have the first conductivity type. The second well surrounds sides of the first well. The third well surrounds sides of the second well. The deep well extends beneath the first well to electrically connect to the second well on opposite sides of the first well.