The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Sep. 12, 2018
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei Province, CN;
He Chen, Wuhan, CN;
Jin Wen Dong, Wuhan, CN;
Jifeng Zhu, Wuhan, CN;
Zi Qun Hua, Wuhan, CN;
Liang Xiao, Wuhan, CN;
Yong Qing Wang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei Province, CN;
Abstract
A memory structure provided by this invention includes a first substrate, a dielectric layer, a bonding pad, and an isolation structure. The first substrate includes a substrate layer and a memory layer. The substrate layer has opposite first and second surfaces, the memory layer is located on the first surface of the substrate layer, and the first substrate includes a bonding pad region. The dielectric layer is disposed on the second surface of the substrate layer. The bonding pad is disposed on the surface of the dielectric layer in the bonding pad region. The isolation structure penetrates through the substrate layer and is disposed at the edge of the bonding pad region and surrounds the substrate layer in the bonding pad region, and the isolation structure is used for isolating the substrate layer in the bonding pad region from the substrate layer at the periphery of the isolation structure.