The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jan. 12, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-Chi Tu, Hsinchu, TW;
Chu-Jie Huang, Tainan, TW;
Sheng-Hung Shih, Hsinchu, TW;
Nai-Chao Su, Tainan, TW;
Wen-Ting Chu, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a bottom electrode, a resistance switching layer and a top electrode. The bottom electrode is over a metallization layer embedded in an inter-metal dielectric layer. The bottom electrode has a top surface and a sidewall that extends at an obtuse angle relative to the top surface. The resistance switching layer is over the bottom electrode. The top electrode is over the resistance switching layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile