The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jul. 13, 2018
Applicants:
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Inventors:
Da-Ming Zhuang, Beijing, CN;
Ming Zhao, Beijing, CN;
Ming-Jie Cao, Beijing, CN;
Li Guo, Beijing, CN;
Shi-Lu Zhan, Beijing, CN;
Xiao-Long Li, Beijing, CN;
Assignees:
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); B28B 3/00 (2006.01); C23C 14/08 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B28B 3/00 (2013.01); C23C 14/08 (2013.01); H01J 37/3414 (2013.01); H01J 37/3426 (2013.01); H01J 37/3429 (2013.01); H01J 37/3491 (2013.01);
Abstract
A sputtering target includes an indium cerium zinc oxide represented by InCeZnO, wherein x=0.5˜2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10Ωcm to about 10 Ωcm. A weight percentage of crystalline InCeZnOin the sputtering target is larger than 80%.