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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10475828 B1

PDFFull Text
Date of Patent:
Nov. 12, 2019

Filed:

Jan. 11, 2018

Image sensor device structure with doping layer in light-sensing region

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yen-Ting Chiang, Tainan, TW;

Chun-Yuan Chen, Tainan, TW;

Hsiao-Hui Tseng, Tainan, TW;

Yu-Jen Wang, Kaohsiung, TW;

Shyh-Fann Ting, Tainan, TW;

Wei-Chuang Wu, Tainan, TW;

Jen-Cheng Liu, Hsinchu, TW;

Dun-Nian Yaung, Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/11 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14638 (2013.01); H01L 27/14685 (2013.01); H01L 31/03529 (2013.01); H01L 31/11 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14629 (2013.01);
Abstract

An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.

Find Patent Forward Citations

Chiang, Yen-Ting. (2019). Image sensor device structure with doping layer in light-sensing region (U.S. Patent No. 10475828). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10475828

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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